MDD3752RH Datasheet | MagnaChip

Description The MDD3752 uses advanced Magna Chip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features    VDS = -40V ID = -43A @VGS = -10V RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V Applications   Inverters General purpose applications Absolute Maximum Ratings (TC =25o) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25 C TC=100 C (Note 3) o o Symbol VDSS VGSS Rating -40 ±20 43 Unit V V A A A W (Note 2) TC=25 C TC=100 C o o ID IDM PD EAS TJ, Tstg 27 -90 50 20 128 -55~+150 m J o Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 40 2.5 Unit o C/W November 2008. Version 1.0 Magna Chip Semiconductor Ltd. MDD3752 - P-Channel Trench MOSFET Ordering Information Part Number MDD3752RH Temp. Range -55~150o C Package D-PAK Packing Tape & Reel Ro HS Status Halogen Free Electrical Characteristics (TJ =25o C unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note : 1. 2. 3. Surface mounted RF4 board with 2oz. Copper. PD is based on TJ(MAX)=150OC, PD(TC=25OC) is based on Rθ JC. Starting TJ=25°C, L=1m H, IAS=-16A VDD=-20V, VGS=-10V Symbol Test...