MDD3N50
MDD3N50 is N-Channel MOSFET manufactured by MagnaChip.
Description
The MDD3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD3N50 is suitable device for SMPS, HID and general purpose applications.
Features
- VDS = 500V
- ID = 2.8A
- RDS(ON) ≤ 2.5Ω
Applications
- Power Supply
- PFC
- Ballast
@VGS = 10V @VGS = 10V
Absolute Maximum Ratings (Ta = 25o C)
Characteristics
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Symbol
VDSS...
