MDD3N50 - N-Channel MOSFET

MagnaChip

General Description

The MDD3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDD3N50 is suitable device for SMPS, HID and general purpose applications.

Key Features

VDS = 500V.
ID = 2.8A.
RDS(ON) ≤ 2.5Ω.

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MDD3N50 n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MDD3N50
Manufacturer	MagnaChip
File Size	184.63 KB
Description	N-Channel MOSFET
Datasheet	MDD3N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDD3N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDD3N50 N-Channel MOSFET 500V, 2.8 A, 2.5Ω General Description The MDD3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD3N50 is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 2.8A RDS(ON) ≤ 2.