MDD3N50G
MDD3N50G is N-Channel MOSFET manufactured by MagnaChip.
Description
The MDD3N50G uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD3N50G is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = 2.8A RDS(ON) ≤ 2.5Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
Absolute Maximum Ratings (Ta = 25o C)
Characteristics Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Symbol VDSS VGSS
PD dv/dt EAR EAS TJ, Tstg
Rating 500 ±30 2.8 1.7 11.2 45 0.36 4.5...
