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MDF12N50 - N-Channel MOSFET 500V

General Description

The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDF12N50 is suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V.

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Datasheet Details

Part number MDF12N50
Manufacturer MagnaChip
File Size 793.78 KB
Description N-Channel MOSFET 500V
Datasheet download datasheet MDF12N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDF12N50 N-channel MOSFET 500V MDF12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF12N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o Rating 500 ±30 11.5 7.0 46 42 0.