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MDF1921 - N-Channel MOSFET

Description

The MDF1921 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDF1921 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications.

Features

  •  VDS = 100V  ID = 60A @VGS = 10V  RDS(ON) < 4.8 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220F Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction.

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Datasheet preview – MDF1921

Datasheet Details

Part number MDF1921
Manufacturer MagnaChip
File Size 951.46 KB
Description N-Channel MOSFET
Datasheet download datasheet MDF1921 Datasheet
Additional preview pages of the MDF1921 datasheet.

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Full PDF Text Transcription

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MDF1921– Single N-Channel Trench MOSFET 100V MDF1921 Single N-channel Trench MOSFET 100V, 60A, 4.8mΩ General Description The MDF1921 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1921 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. Features  VDS = 100V  ID = 60A @VGS = 10V  RDS(ON) < 4.
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