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MDF1922 - Single N-channel Trench MOSFET

Description

The MDF1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDF1922 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications.

Features

  •  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 8.7 mΩ @VGS = 10V  100% UIL Tested D G D S TO-220F Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC TC=100oC Power Dissipation Single Pulse Avalanche Energy TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Ca.

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Datasheet preview – MDF1922

Datasheet Details

Part number MDF1922
Manufacturer MagnaChip
File Size 1.02 MB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDF1922 Datasheet
Additional preview pages of the MDF1922 datasheet.

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Full PDF Text Transcription

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MDF1922 – Single N-Channel Trench MOSFET 100V MDF1922 Single N-channel Trench MOSFET 100V, 40A, 8.7mΩ General Description The MDF1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1922 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 8.
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