MDF7N60 Datasheet | MagnaChip

Description The MDF7N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V @ Tjmax  ID = 7.0A @ VGS = 10V  RDS(ON) ≤ 1.15Ω @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25o C) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Characteristics Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25o C TC=100o C TC=25o C Derate above 25 o C Symbol VDSS VDSS @ Tjmax VGSS ID IDM Dv/dt EAS TJ, Tstg Rating 600 660 ±30 7.0 4.4 28 42 4.2 4.5 220 -55~150 Unit V V V A A A W W/ o C V/ns m J o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug. 2021. Version 2.4 Symbol RθJA RθJC Rating 62.5 3.01 Unit o C/W Magnachip Semiconductor...