MDF7N60B
MDF7N60B is N-Channel MOSFET manufactured by MagnaChip.
Description
These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω
@ Tjmax @ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25o C)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
- Id limited by maximum junction temperature
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Jan. 2021. Version 1.5
Symbol VDSS
VDSS @ Tjmax VGSS
EAR dv/dt EAS TJ, Tstg
Rating 600 660 ±30 7.0- 4.4- 28- 42 0.33 13.1 4.5 220
-55~150
Unit V
V A A A W W/ o C m J V/ns m J o C
Symbol RθJA RθJC
Rating 62.5 3.01
Unit o C/W
Magnachip Semiconductor Ltd.
MDF7N60B N-channel MOSFET...
