Datasheet Details
| Part number | MDP06N033 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 963.44 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDP06N033 Datasheet
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General Description
The MDP06N033 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDP06N033 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications.
Key Features
- VDS = 60V ID = 120A @VGS = 10V RDS(ON) < 3.3 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-A.