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MDP06N033 - N-Channel MOSFET

Datasheet Summary

Description

The MDP06N033 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDP06N033 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications.

Features

  •  VDS = 60V  ID = 120A @VGS = 10V  RDS(ON) < 3.3 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-A.

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Datasheet Details

Part number MDP06N033
Manufacturer MagnaChip
File Size 963.44 KB
Description N-Channel MOSFET
Datasheet download datasheet MDP06N033 Datasheet
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Full PDF Text Transcription

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MDP06N033– Single N-Channel Trench MOSFET 60V MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3mΩ General Description The MDP06N033 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP06N033 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. Features  VDS = 60V  ID = 120A @VGS = 10V  RDS(ON) < 3.
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