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MDP06N090 - N-Channel MOSFET

General Description

The MDP06N090 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDP06N090 is suitable device for Synchronous Rectification For Server and general purpose applications.

Key Features

  •  VDS = 60V  ID = 62A @VGS = 10V  RDS(ON) < 9.0 mΩ @VGS = 10V  100% UIL Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 201.

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Datasheet Details

Part number MDP06N090
Manufacturer MagnaChip
File Size 915.13 KB
Description N-Channel MOSFET
Datasheet download datasheet MDP06N090 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDP06N090 – Single N-Channel Trench MOSFET 60V MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0mΩ ㄹ General Description The MDP06N090 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP06N090 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 60V  ID = 62A @VGS = 10V  RDS(ON) < 9.