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MDP08N055TH - Single N-channel Trench MOSFET

Datasheet Summary

Description

The MDP08N055TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality.

Features

  •  VDS = 80V  ID = 120 A @VGS = 10V  Very low on-resistance RDS(ON) < 5.5 mΩ @VGS = 10V  175 oC operating temperature  100% UIL Tested  100% Rg Tested  100% △VDS Tested D G DS TO-220 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC TC=25oC TC=100oC.

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Datasheet Details

Part number MDP08N055TH
Manufacturer MagnaChip
File Size 1.09 MB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDP08N055TH Datasheet
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MDP08N055TH – Single N-Channel Trench MOSFET 80V MDP08N055TH Single N-channel Trench MOSFET 80V General Description The MDP08N055TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike, Light electric vehicles, DC/DC converter, and general purpose applications . Features  VDS = 80V  ID = 120 A @VGS = 10V  Very low on-resistance RDS(ON) < 5.
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