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MDP13N50G - N-Channel MOSFET

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

  • VDS = 500V.
  • VDS = 550V @ Tjmax.
  • ID = 13.0A @ VGS = 10V.
  • RDS(ON) < 0.5Ω @ VGS = 10V.

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Datasheet Details

Part number MDP13N50G
Manufacturer MagnaChip
File Size 1.40 MB
Description N-Channel MOSFET
Datasheet download datasheet MDP13N50G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDP13N50G/MDF13N50G N-channel MOSFET 500V MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  VDS = 550V @ Tjmax  ID = 13.0A @ VGS = 10V  RDS(ON) < 0.
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