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MDP1922 - Single N-channel MOSFET

General Description

The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDP1922 is suitable device for DC/DC Converter and general purpose applications.

Key Features

  •  VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.4 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D GDS TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC TC=100oC Power Dissipation Single Pulse Avalanche Energy TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance,.

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Datasheet Details

Part number MDP1922
Manufacturer MagnaChip
File Size 1.02 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDP1922 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDP1922– Single N-Channel Trench MOSFET 100V MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4mΩ General Description The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1922 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.