MDP7N50B - N-Channel Trench MOSFET

MagnaChip

General Description

The MDP/F7N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDP/F7N50B is suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @VGS = 10V @VGS = 10V.

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MDP7N50B n-channel trench mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MDP7N50B
Manufacturer	MagnaChip
File Size	1.15 MB
Description	N-Channel Trench MOSFET
Datasheet	MDP7N50B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDP7N50B / MDF7N50B N-channel MOSFET 500V MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDP/F7N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F7N50B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 7.0A RDS(ON) ≤ 0.