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MDP8N60 - N-Channel Trench MOSFET

General Description

The MDP8N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDP8N60 is suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 600V VDS = 660V ID =8.0A RDS(ON) ≤ 1.0Ω.

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Datasheet Details

Part number MDP8N60
Manufacturer MagnaChip
File Size 740.65 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDP8N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDP8N60 N-channel MOSFET 600V MDP8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDP8N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP8N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID =8.0A RDS(ON) ≤ 1.