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MDQ23N50D - N-Channel Trench MOSFET

General Description

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These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Key Features

  • VDS = 500V.
  • ID = 23A.
  • RDS(ON) ≤ 0.245Ω.

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Datasheet Details

Part number MDQ23N50D
Manufacturer MagnaChip
File Size 1.10 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDQ23N50D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDQ23N50D N-Channel MOSFET 500V MDQ23N50D N-Channel MOSFET 500V, 23A, 0.245Ω General Description . These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 23A  RDS(ON) ≤ 0.