MDS3604 Datasheet | MagnaChip

Description The MDS3604 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Features  VDS = -30V  ID = -12.1A @VGS = -20V  RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications  Load Switch  General purpose applications  Smart Module for Note PC Battery 8(D)7(D)6(D)5(D) 1(S)2(S)3(S)4(G) Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25o C TC=70o C TA=25o C TA=70o C TC=25o C TC=70o C TA=25o C TA=70o C Symbol VDSS VGSS EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Jul. 2021. Version 1.4 Rating Unit -30...