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MDS3603 - P-Channel Trench MOSFET

General Description

The MDS3603 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance.

This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Key Features

  • VDS = -30V ID = -12A @VGS = -10V RDS(ON) < 8.5mΩ @VGS = -20V < 10.1mΩ @VGS = -10V < 14.5mΩ @VGS = -5V.

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Datasheet Details

Part number MDS3603
Manufacturer MagnaChip
File Size 693.53 KB
Description P-Channel Trench MOSFET
Datasheet download datasheet MDS3603 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS3603– Single P-Channel Trench MOSFET MDS3603 Single P-Channel Trench MOSFET, -30V, -12A, 10.1mΩ General Description The MDS3603 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS = -30V ID = -12A @VGS = -10V RDS(ON) < 8.5mΩ @VGS = -20V < 10.1mΩ @VGS = -10V < 14.