MDS3653 Datasheet | MagnaChip

Description The MDS3653 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications mon in Note PC Battery. Features  VDS = -30V  ID = -13A @VGS = -10V  RDS(ON) < 7mΩ @VGS = -10V < 12mΩ @VGS = -4V Applications  Load Switch  General purpose applications  Smart Module for Note PC Battery 8(D)7(D)6(D)5(D) 1(S) 2(S)3(S) 4(G) Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 1) (Note 2) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating -30 ±20 -13 -52 2.5 180 -55~150 Rating 50 25 Unit V V A A W m J o C Unit o C/W Jul. 2021. Version 1.2 Magnachip Semiconductor Ltd. MDS3653- Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ Ordering Information Part Number MDS3653URH Temp. Range -55~150o C Package SOIC-8 Packing Tape & Reel Ro HS Status Halogen Free Electrical Characteristics (Ta = 25o C unless otherwise...