MDS3651 Datasheet | MagnaChip

Description The MDS3651 uses advanced Magna Chip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features  VDS = -30V  ID = -6.0A @ VGS = -10V  RDS(ON) <35m @ VGS = -10V <55m @ VGS = -4.5V Applications  Inverters  General purpose applications 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25o C Ta=100o C Ta=25o C Ta=100o C Symbol VDSS VGSS EAS TJ, Tstg Rating -30 ±20 -6.0 -4.1 -30 2 0.8 60.5 -55~150 Unit V V A A A W m J o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Rating 62.5 60 Unit o C/W January 2009. Version 2.0 1 Magna Chip Semiconductor Ltd. MDS3651- Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ Ordering Information Part Number MDS3651URH Temp. Range -55~150o...