MDS3652 Datasheet | MagnaChip

Description The MDS3652 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features  VDS = -30V  ID = -11A @VGS = -10V  RDS(ON) < 17mΩ @VGS = -10V < 27mΩ @VGS = -4.5V Applications  Load Switch  General purpose applications 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25o C Ta=100o C Ta=25o C Ta=100o C Symbol VDSS VGSS EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Rating -30 ±20 -11 -7 -60 3.1 1.2 60 -55~150 Rating 40 25 Unit V V A A A W m J o C Unit o C/W Jan. 2021. Version...