MDS3753E Datasheet | MagnaChip

Description The MDS3753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low gate charge operation offer superior benefit in the application. Features  VDS = -40V  ID = -7.1A @ VGS = 10V  RDS(ON) <30m @ VGS = -10V <37m @ VGS = -4.5V Applications  Inverters  General purpose applications 8(D)7(D)6(D)5(D) 1(S)2(S)3(S) 4(G) Absolute Maximum Ratings (TA =25o C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 1) (Note 2) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating -40 ±20 -7.1 -50 2.5 98 -55~150 Rating 50 25 Unit V V A A W m J o C Unit o C/W Jun. 2021. Version 1.3 Magnachip Semiconductor Ltd. MDS3753E- P-Channel Trench MOSFET Ordering Information Part Number MDS3753EURH Temp. Range -55~150o C Package SOIC-8 Packing Tape & Reel Ro HS Status Halogen Free Electrical Characteristics (TJ =25o C unless otherwise...