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MDS3753E - P-channel MOSFET

General Description

Low RDS(ON) and low gate charge operation offer superior benefit in the application.

Key Features

  •  VDS = -40V  ID = -7.1A @ VGS = 10V  RDS(ON).

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Datasheet Details

Part number MDS3753E
Manufacturer MagnaChip
File Size 1.00 MB
Description P-channel MOSFET
Datasheet download datasheet MDS3753E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS3753E– P-Channel Trench MOSFET MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General Description The MDS3753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low gate charge operation offer superior benefit in the application. Features  VDS = -40V  ID = -7.1A @ VGS = 10V  RDS(ON) <30m @ VGS = -10V <37m @ VGS = -4.