MDS5651 Datasheet | MagnaChip

Description The MDS5651 uses advanced Magna Chip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 26mΩ @VGS = 10V < 39mΩ @VGS = 4.5V Applications Inverters General purpose applications 6(D2)5(D2) 7(D1) 8(D1) 3(S24) (G2) 2(G1) 1(S1) D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25o C) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current(1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25o C Ta=100o C Ta=25o C Ta=100o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol...