Datasheet4U Logo Datasheet4U.com

MDS5652 - Dual N-Channel Trench MOSFET

General Description

The MDS5652 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and exellent reliability.

Key Features

  • VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 35mΩ @VGS = 4.5V.

📥 Download Datasheet

Datasheet Details

Part number MDS5652
Manufacturer MagnaChip
File Size 749.63 KB
Description Dual N-Channel Trench MOSFET
Datasheet download datasheet MDS5652 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MDS50 DIODE / SCR MODULE ST Microelectronics
MDS50 Three Phase Bridge Rectifier Naina Semiconductor
MDS50-1200 DIODE / SCR MODULE ST Microelectronics
MDS50-800 DIODE / SCR MODULE ST Microelectronics
MDS500 Three Phase Rectifier Bridge YZPST

Other Datasheets by MagnaChip

Part Number Description
MDS5651 Dual N-Channel Trench MOSFET
MDS5601 Dual N-Channel Trench MOSFET
MDS1101 N-Channel MOSFET
MDS1521 Single N-channel Trench MOSFET
MDS1524 N-Channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ General Description The MDS5652 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and exellent reliability. Features VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 35mΩ @VGS = 4.