MDS9651 Datasheet | MagnaChip

Description The MDS9651 uses advanced Magna Chip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V P-Channel VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON) <35mΩ @ VGS = -10V <55mΩ @ VGS = -4.5V Applications Inverters General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25o C Ta=100o C Ta=25o C Ta=100o C Symbol N-Ch VDSS VGSS ID IDM PD EAS TJ, Tstg 30 ±20 6.9 4.3 30 2 0.8 18 -55~150 Rating P-Ch -30 ±20 -6.0 -4.1 -30 2 0.8 60.5 V V A A A W m J o Unit Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient(Steady-State) Thermal Resistance, Junction-to-Case (1) Device N-Ch N-Ch P-Ch P-Ch Symbol RθJA RθJC RθJA RθJC Rating 62.5 60 62.5 40 Unit o C/W January 2009. Version 1.0 Magna Chip Semiconductor Ltd. Free Datasheet http://.datasheet-pdf./ MDS9651- plementary N-P Channel Trench MOSFET Ordering Information Part Number MDS9651URH Temp. Range -55~150o C Package SOIC-8 Packing Tape & Reel Ro HS Status Halogen Free N-channel Electrical Characteristics (Ta =25o C unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time...