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MDS9651 - Complementary N-P Channel Trench MOSFET

General Description

The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

Key Features

  • N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON).

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Datasheet Details

Part number MDS9651
Manufacturer MagnaChip
File Size 1.20 MB
Description Complementary N-P Channel Trench MOSFET
Datasheet download datasheet MDS9651 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS9651– Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General Description The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V P-Channel VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON) <35mΩ @ VGS = -10V <55mΩ @ VGS = -4.