MDS9652E - N-P Channel Trench MOSFET

MagnaChip

General Description

The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

Key Features

N-Channel  VDS = 30V  ID = 7.2A @ VGS = 10V  RDS(ON).

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MDS9652E n-p channel trench mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MDS9652E
Manufacturer	MagnaChip
File Size	1.46 MB
Description	N-P Channel Trench MOSFET
Datasheet	MDS9652E Datasheet

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Other Datasheets by MagnaChip

Part Number	Description
MDS9651	Complementary N-P Channel Trench MOSFET
MDS1101	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

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MDS9652E– Complementary N-P Channel Trench MOSFET MDS9652E Complementary N-P Channel Trench MOSFET General Description The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel  VDS = 30V  ID = 7.2A @ VGS = 10V  RDS(ON) <23m @ VGS = 10V <30m @ VGS = 4.5V P-Channel VDS = -30V ID = -6.1A @ VGS = -10V RDS(ON) <38m @ VGS = -10V <52m @ VGS = -4.