MDS9652E
MDS9652E is N-P Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDS9652E uses advanced Magna Chip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Features
N-Channel VDS = 30V ID = 7.2A @ VGS = 10V RDS(ON)
<23m @ VGS = 10V
<30m @ VGS = 4.5V
P-Channel VDS = -30V ID = -6.1A @ VGS = -10V RDS(ON) <38m @ VGS = -10V <52m @ VGS = -4.5V
Applications
Inverters General purpose applications
5(D2) 6(D2) 7(D1)
8(D1)
D1 D2
4(G2) 3(S2) 2(G1)
1(S1)
G1
G2 S1
S2
Absolute Maximum Ratings (Ta =25o C unless otherwise noted)
Characteristics
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
Ta=25o C Ta=100o C
Ta=25o C Ta=100o C
Symbol
VDSS VGSS
ID IDM PD EAS TJ, Tstg
Rating
N-Ch
P-Ch
30 -30
±20 ±20
7.2...
