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MDU10N070RH - N-channel MOSFET

General Description

The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications.

Key Features

  •  VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 8 D Pin 5,6,7,8 1 4 4 1 PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC TA=25o.

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Datasheet Details

Part number MDU10N070RH
Manufacturer MagnaChip
File Size 1.19 MB
Description N-channel MOSFET
Datasheet download datasheet MDU10N070RH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU10N070RH – Single N-Channel Trench MOSFET 100V MDU10N070RH Single N-channel Trench MOSFET 100V, 53A, 7.4mΩ General Description The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.