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MDU10N070RH - N-channel MOSFET

Datasheet Summary

Description

The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications.

Features

  •  VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 8 D Pin 5,6,7,8 1 4 4 1 PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC TA=25o.

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Datasheet Details

Part number MDU10N070RH
Manufacturer MagnaChip
File Size 1.19 MB
Description N-channel MOSFET
Datasheet download datasheet MDU10N070RH Datasheet
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Full PDF Text Transcription

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MDU10N070RH – Single N-Channel Trench MOSFET 100V MDU10N070RH Single N-channel Trench MOSFET 100V, 53A, 7.4mΩ General Description The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.
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