MDU10N070RH Datasheet | MagnaChip

Description The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications. Features  VDS = 100V  ID = 53 A @VGS = 10V  Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 8 Pin 5,6,7,8 1 4 4 1 PDFN56 Absolute Maximum Ratings (Ta = 25o C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25o C (Silicon Limited) TC=25o C (Package Limited) TC=100o C (Silicon Limited) TA=25o C Power Dissipation Single Pulse Avalanche Energy (3) TC=25o C TC=100o C TA=25o C ( T ≤ 10s) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient ( T ≤ 10s ) (1) Thermal Resistance, Junction-to-Ambient ( Steady State ) (1) Thermal Resistance, Junction-to-Case Jul. 2021. Ver. 1.4 Pin 4 Pin 1, 2,3 Symbol VDSS VGSS EAS TJ, Tstg Symbol RθJA RθJA RθJC Rating Unit ±20 84 m J -55~150 o C Rating 22.7 50.0...