MDU10N180
MDU10N180 is Single N-channel MOSFET manufactured by MagnaChip.
Description
The MDU10N180 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N180 is suitable device for Synchronous Rectification For Server and general purpose applications.
Features
VDS = 100V ID = 40 A @VGS = 10V Very low on-resistance RDS(ON)
< 18.0 mΩ @VGS = 10V < 23.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
1 4
5 8
4 1
PDFN56
Absolute Maximum Ratings (TJ = 25o C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3)
TC=25o C (Silicon Limited) TC=25o C (Package Limited) TC=100o C (Silicon Limited) TA=25o C
Power Dissipation Single Pulse Avalanche Energy (2)
TC=25o C TC=100o C TA=25o C
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jan. 2021. Ver. 1.2
Pin 5,6,7,8
Pin 4
Pin 1, 2,3
Symbol VDSS VGSS
IDM PD EAS TJ, Tstg
Rating
Unit
±20
50 m J
-55~150 o C
Symbol RθJA RθJC
Rating 22.7 1.5
Unit o C/W
Magnachip Semiconductor...
