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MDU10N180 - Single N-channel MOSFET

General Description

The MDU10N180 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU10N180 is suitable device for Synchronous Rectification For Server and general purpose applications.

Key Features

  •  VDS = 100V  ID = 40 A @VGS = 10V  Very low on-resistance RDS(ON) < 18.0 mΩ @VGS = 10V < 23.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 1 4 5 8 4 1 PDFN56 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC Junction and.

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Datasheet Details

Part number MDU10N180
Manufacturer MagnaChip
File Size 1.19 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDU10N180 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU10N180 – Single N-Channel Trench MOSFET 100V MDU10N180 Single N-channel Trench MOSFET 100V, 40A, 18mΩ General Description The MDU10N180 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N180 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 100V  ID = 40 A @VGS = 10V  Very low on-resistance RDS(ON) < 18.0 mΩ @VGS = 10V < 23.0 mΩ @VGS = 4.