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MDU1931 - Single N-channel Trench MOSFET

Datasheet Summary

Description

The MDU1931 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1931 is suitable device for Synchronous Rectification For Server and general purpose applications.

Features

  •  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested DD DD DD DD D S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TA=25oC(3) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Characterist.

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Datasheet Details

Part number MDU1931
Manufacturer MagnaChip
File Size 909.64 KB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDU1931 Datasheet
Additional preview pages of the MDU1931 datasheet.

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Full PDF Text Transcription

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MDU1931 – Single N-Channel Trench MOSFET 80V MDU1931 Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ General Description The MDU1931 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.
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