MDU1931VRH Datasheet | MagnaChip

Description The MDU1931VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931VRH is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested DD DD DD DD S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25o C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25o C (Silicon Limited) TC=25o C (Package Limited) TC=100o C TA=25o C(3) Power Dissipation Single Pulse Avalanche Energy (2) TC=25o C TC=100o C TA=25o C(3) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2021. Rev. 1.5 Symbol VDSS VGSS IDM PD EAS TJ, Tstg Rating 80 ±20 127.2 100.0 80.5 20.5(3) 400.0 96.2 38.5 2.5(3) 242 -55~150 Unit V V W m J o C Symbol RθJA RθJC Rating 50 1.3 Unit o...