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MDU1931VRH - N-channel MOSFET

Datasheet Summary

Description

The MDU1931VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1931VRH is suitable device for Synchronous Rectification For Server and general purpose applications.

Features

  •  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D DD DD DD DD S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TA=25oC(3) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Ch.

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Datasheet Details

Part number MDU1931VRH
Manufacturer MagnaChip
File Size 1.24 MB
Description N-channel MOSFET
Datasheet download datasheet MDU1931VRH Datasheet
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Full PDF Text Transcription

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MDU1931VRH – Single N-Channel Trench MOSFET 80V MDU1931VRH Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ General Description The MDU1931VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931VRH is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.
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