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MDU1931VRH - N-channel MOSFET

General Description

The MDU1931VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1931VRH is suitable device for Synchronous Rectification For Server and general purpose applications.

Key Features

  •  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D DD DD DD DD S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TA=25oC(3) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Ch.

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Datasheet Details

Part number MDU1931VRH
Manufacturer MagnaChip
File Size 1.24 MB
Description N-channel MOSFET
Datasheet download datasheet MDU1931VRH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU1931VRH – Single N-Channel Trench MOSFET 80V MDU1931VRH Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ General Description The MDU1931VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931VRH is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.