MDV3604 Datasheet | MagnaChip

Description The MDV3604 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. DD DD DD DD Features  VDS = -30V  ID = -20A @VGS = -10V  RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications  Load Switch  General purpose applications  Smart Module for Note PC Battery S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25o C (Package limited) TC=25o C (Silicon limited) TA=25o C TA=70o C TC=25o C TA=25o C Symbol VDSS VGSS IDM PD EAS TJ, Tstg Rating -30 ±25 -20 -36.1 -12.6(3) -10.2(3) -32 27.7 3.4(3) 84.5 -55~150 Unit V V A W m J o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jan. 2021. Version...