Datasheet4U Logo Datasheet4U.com

MDV3604 - P-Channel Trench MOSFET

Description

The MDV3604 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance.

This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

  •  VDS = -30V  ID = -20A @VGS = -10V  RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V.

📥 Download Datasheet

Datasheet preview – MDV3604

Datasheet Details

Part number MDV3604
Manufacturer MagnaChip
File Size 1.07 MB
Description P-Channel Trench MOSFET
Datasheet download datasheet MDV3604 Datasheet
Additional preview pages of the MDV3604 datasheet.

📁 Similar Datasheet

  • MDV3604URH - P-Channel MOSFET (VBsemi)
  • MDV03-400 - ULTRA-FAST RECOVERY DIODE (ST Microelectronics)
  • MDV04-600 - HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO (ST Microelectronics)
  • MDV04600 - HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO (ST Microelectronics)
  • MDVBS2-6613 - DVBS TUNER (COMTECH)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MDV3604– Single P-Channel Trench MOSFET MDV3604 Single P-Channel Trench MOSFET, -30V, -20A, 12.1mΩ General Description The MDV3604 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. DD DD DD DD Features  VDS = -30V  ID = -20A @VGS = -10V  RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.
Published: |