MMD60R280RZ - N-channel MOSFET

MagnaChip

General Description

MMD60R280RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

This device combines improvement of switching speed with effective switching behavior.

Key Features

Low Power Loss by High Speed Switching and Low On-Resistance.
Excellent ESD robustness.
100% Avalanche Tested.
Green Package-Pb Free Plating, Halogen Free.
Zener-Integrated.

📥 Download Datasheet

MMD60R280RZ n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MMD60R280RZ
Manufacturer	MagnaChip
File Size	741.40 KB
Description	N-channel MOSFET
Datasheet	MMD60R280RZ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MMD60R360P	N-Channel MOSFET	INCHANGE
MMD60R580Q	N-Channel MOSFET	INCHANGE
MMD60R900QRH	N-Channel MOSFET Transistor	Inchange Semiconductor
MMD60A	Rectifier Diode	MacMic
MMD60A160U	Rectifier Diode	MacMic

Other Datasheets by MagnaChip

Part Number	Description
MMD60R1K0RFZ	N-Channel MOSFET
MMD60R300Q	N-channel MOSFET
MMD60R360P	N-channel MOSFET
MMD60R360Q	N-Channel MOSFET
MMD60R400RFZ	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MMD60R280RZ Datasheet MMD60R280RZ 600V 0.28Ω N-channel MOSFET  Description MMD60R280RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. This device combines improvement of switching speed with effective switching behavior. And it also will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.28 3 13.8 24.