MMD60R300Q Datasheet | MagnaChip

Description MMD60R300Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. - Key Parameters Parameter VDS @ Tj, max RDS(on), max VTH, typ ID Qg, typ Value 650 0.30 3 13.8 25 Unit V Ω V A n C - Package & Internal Circuit - Features - Low Power Loss by High Speed Switching and Low On-Resistance - Excellent ESD robustness - 100% Avalanche Tested - Green Package - Pb Free Plating, Halogen Free - Product validation acc. JEDEC Standard - Applications - PFC Power Supply Stages - Switching Applications - Adapter - Ordering Information Order Code MMD60R300QRH Marking 60R300Q Temp. Range Package Packing -55 ~ 150o C TO-252(2L) Reel Ro HS Status pliant Jun. 2021. Revision 1.2 Magnachip Semiconductor Ltd. MMD60R300Q Datasheet - Absolute Maximum Rating (Tc=25o C unless otherwise specified) Parameter Drain - Source voltage Gate - Source voltage Symbol VDSS VGSS Continuous drain current(1) Pulsed drain current(2) Power...