Datasheet Summary
MMD70R900Q Datasheet
700V 0.9Ω N-channel MOSFET
- Description
MMD70R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 750 0.9
3 5 11
Unit V Ω V A nC
- Package & Internal Circuit D
- Features
- Low Power Loss by High Speed Switching and Low On-Resistance
- Excellent ESD robustness
- 100% Avalanche Tested
- Green Package
- Pb...