MMD80R1K2P
MMD80R1K2P is N-Channel MOSFET manufactured by MagnaChip.
Description
MMD80R1K2P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 850 1.2
3 4.5 15.2
Unit V Ω V A n C
- Package & Internal Circuit
- Features
- Low Power Loss by High Speed Switching and Low On-Resistance
- 100% Avalanche Tested
- Green Package
- Pb Free Plating, Halogen Free
- Applications
- PFC Power Supply Stages
- Switching Applications
- Adapter
- Motor Control
- DC
- DC Converters
- Ordering Information
Order Code MMD80R1K2PRH
Marking 80R1K2P
Temp. Range -55 ~ 150℃
Package TO-252
Packing Ro HS Status Reel & Tape Halogen Free
Jun. 2021. Revision 1.2
Magnachip Semiconductor Ltd.
MMD80R1K2P Final Datasheet
- Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter Drain
- Source voltage Gate
- Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single
- pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction...
