MMD80R1K2QZ Datasheet | MagnaChip

Description MMD80R1K2QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. - Key Parameters Parameter VDS @ Tj,max RDS(on),max VGS(th),typ ID Qg,typ Value 850 1.2 3.5 4.5 11 Unit V Ω V A n C - Package & Internal Circuit - Features - Low Power Loss by High Speed Switching and Low On-Resistance - Excellent ESD robustness - 100% Avalanche Tested - Green Package - Pb Free Plating, Halogen Free - Applications - PFC Power Supply Stages - Switching Applications - Adapter - Ordering Information Order Code Marking Temp. Range MMD80R1K2QZRH 80R1K2QZ -55 ~ 150 o C Jan. 2021. Revision 1.1 Package TO-252(2L) Packing Reel Ro HS Status pliant Magnachip Semiconductor Ltd. MMD80R1K2QZ Datasheet - Absolute Maximum Rating (Tc=25 o C unless otherwise specified) Parameter Drain - Source voltage Gate - Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature 1) Pulse width t P limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Symbol VDSS...