MMF80R900PTH Datasheet | MagnaChip

Description MMF80R900PTH is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. - Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 850 0.9 3 6 17.6 Unit V Ω V A n C - Package & Internal Circuit D - Features - Low Power Loss by High Speed Switching and Low On-Resistance - 100% Avalanche Tested - Green Package - Pb Free Plating, Halogen Free - Applications - PFC Power Supply Stages - Switching Applications - Adapter - Ordering Information Order Code MMF80R900PTH Marking 80R900P Temp. Range -55 ~ 150o C Package TO-220F Packing Tube Ro HS Status pliant Jun. 2021. Revision 1.4 Magnachip Semiconductor Ltd. MMF80R900PTH Datasheet - Absolute Maximum Rating (Tc=25 o C unless otherwise specified) Parameter Drain - Source voltage Gate - Source voltage Symbol VDSS VGSS Continuous drain current(2) Pulsed drain...