Datasheet4U Logo Datasheet4U.com

MMF80R900QZ - N-channel MOSFET

Description

MMF80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • Excellent ESD robustness.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number MMF80R900QZ
Manufacturer MagnaChip
File Size 1.32 MB
Description N-channel MOSFET
Datasheet download datasheet MMF80R900QZ Datasheet

📁 Similar Datasheet

  • MMF80R1K2P - N-Channel MOSFET (INCHANGE)
  • MMF80R450P - N-Channel MOSFET (INCHANGE)
  • MMF80R650PTH - N-Channel MOSFET (INCHANGE)
  • MMF800Y020DK1 - FRED (MacMic)
  • MMF8.0A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SUNMATE)
  • MMF8.0A - 200W Surface Mount Transient Voltage Suppressors (SEMITECH)
  • MMF8.0CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SUNMATE)
  • MMF8.0CA - 200W Surface Mount Transient Voltage Suppressors (SEMITECH)
  • MMF8.5A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SUNMATE)
  • MMF8.5A - 200W Surface Mount Transient Voltage Suppressors (SEMITECH)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MMF80R900QZ Datasheet MMF80R900QZ 800V 0.90Ω N-channel MOSFET  Description MMF80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VGS(th),typ ID Qg,typ Value 850 0.90 3.
Published: |