Datasheet4U Logo Datasheet4U.com

MMIS70H900Q - N-channel MOSFET

Description

MMIS70H900Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number MMIS70H900Q
Manufacturer MagnaChip
File Size 1.04 MB
Description N-channel MOSFET
Datasheet download datasheet MMIS70H900Q Datasheet

📁 Similar Datasheet

  • MMIS70R900PTH - N-Channel MOSFET (INCHANGE)
  • MMI-6SF - Multi-Mod 6 zone interface module (Gamewell-FCI)
  • MMI-810E - Log Video Amplifier Integrated Circuit (Monolithic Microsystems)
  • MMI-910B - Log Video Amplifier Integrated Circuit (Monolithic Microsystems)
  • MMI131A - Dual-axis dynamic tilt detection module (MiraMEMS)
  • MMI200-PC - PC/104 Counter/interface Card (MAZeT)
  • MMI300 - Diodes & Rectifiers (MicroMetrics)
  • MMI30x - Diodes & Rectifiers (MicroMetrics)
  • MMI4832 - Encoder Interface ic (MAZeT)
  • MMI5701 - 4-Bit Expandable Bipolar Microcontroller (MMI)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MMIS70H900Q Datasheet MMIS70H900Q 700V 1.4Ω N-channel MOSFET  Description MMIS70H900Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 1.4 3 3.
Published: |