MMSF60R190Q
Description
MMSF60R190Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.19
3 20 36
Unit V Ω V A n C
- Package & Internal Circuit D
- Features
- Low Power Loss by High Speed Switching and Low On-Resistance
- 100% Avalanche Tested
- Green Package
- Pb Free Plating, Halogen Free
- Applications
- PFC Power Supply Stages
- Switching Applications
- Adapter
- Ordering Information
Order Code
Marking Temp. Range
MMSF60R190QTH 60R190QS -55 ~ 150℃
Package TO-220SF
Packing Tube
Ro HS Status Halogen Free
May. 2021. Revision 1.3
Magnachip Semiconductor Ltd.
MMSF60R190Q Datasheet
- Absolute Maximum Rating (Tc=25℃ unless otherwise...
