MMSF60R190R
Description
MMSF60R190R is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. This device bines improvement of switching speed with effective switching behavior. And it also will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.19
3 20 36.1
Unit V Ω V A n C
- Package & Internal Circuit D
- Features
- Low Power Loss by High Speed Switching and Low On-Resistance
- Excellent ESD robustness
- 100% Avalanche Tested
- Green Package-Pb Free Plating, Halogen Free
- Applications
- PFC Power Supply Stages
- Switching Applications
- Adapter
- DC-DC Converters
- Ordering Information
Order Code MMSF60R190RTH
Marking 60R190R
Temp. Range -55 ~ 150o C
Package TO-220SF
Packing Tube
Ro HS Status...
