MagnaChip MMSF60R360Q
MMSF60R360Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.| Part No. | MMSF60R360Q |
|---|---|
| Datasheet | MMSF60R360Q Download |
| Manufacturer |  MagnaChip |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●KEY PARAMETERS
Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.36 3 11 19●
FEATURES
Unit V Ω V A nC● Package & Internal Circuit D GDS G S
● Low Power Loss by High Speed Switching and Low On-Resistance
● 100% Avalanche Tested
● Green Package – Pb Free Plating, Halogen Free
●
APPLICATIONS
● PFC Power Supply Stages● Switching
APPLICATIONS
● Adapter● Ordering Information Order Code Marking Temp. Range MMSF60R360QTH 60R360QS -55 ~ 150℃ Package TO-220SF May. 2021. Revision 1.3 1 Packing Tube RoHS Status Halogen Free Magnachip Semiconductor Ltd. MMSF60R360Q Datasheet
● Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage VDSS VGSS Continuous drain current(1) ID Pulsed drain current(2) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(3) Storage temperature Maximum operating junction temperature 1) Id limited by maximum junction...
