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SLB80R240SJ - N-Channel MOSFET

General Description

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Vsch,paRerDgcSe(oi(na)ttylylppy.

Key Features

  • - 20A, 800V, RDS(on) typ. = 0.22Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 70nC) SLP80R240SJ SLF80R240SJ SLB80R240SJ D GDS TO-220 GDS TO-220F D2-PAK GS D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2PAK/TO-220 TO-220F VDSS Drain-Source Voltage ID Drain Current - Continuous (TC =.

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Datasheet Details

Part number SLB80R240SJ
Manufacturer Maple Semiconductor
File Size 641.51 KB
Description N-Channel MOSFET
Datasheet download datasheet SLB80R240SJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLB/F/P80R240SJ · General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLB/F/P80R240SJ 800V N-Channel MOSFET Features - 20A, 800V, RDS(on) typ.= 0.