SLB80R240SJ Datasheet | Maple Semiconductor

Description This Power MOSFET is produc Feeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb L7oo.e6wl Aeo,gng5ay0tee0. Vsch,pa Rer Dgc Se(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@r Ce V)d GS = V to minimize conduction loss, pr-o Hvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and mutation m-o Imdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLB/F/P80R240SJ 800V N-Channel MOSFET Features - 20A, 800V, RDS(on) typ.= 0.22Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 70n C) SLP80R240SJ SLF80R240SJ SLB80R240SJ TO-220 TO-220F D2-PAK GS Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2PAK/TO-220 TO-220F VDSS Drain-Source Voltage ID Drain Current - Continuous (TC...