SLB80R240GT - 800V N-Channel Multi-EPI Super JMOSFET

Product Overview

Msemitek

Datasheet Details

Part number	SLB80R240GT
Manufacturer	Msemitek
File Size	1.14 MB
Description	800V N-Channel Multi-EPI Super JMOSFET
Datasheet	SLB80R240GT Datasheet
Additional preview pages of the SLB80R240GT datasheet.

Product details

Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ. Qg =46nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D GDS TO-220F G S TO-263 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- Pulsed (Note 1) Gate-Source Voltage Single Pulsed Av.

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Published: Mar 15, 2025 |