Datasheet Details
| Part number | SLB80R240GT |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.14 MB |
| Description | 800V N-Channel Multi-EPI Super JMOSFET |
| Datasheet |
 SLB80R240GT Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ. Qg =46nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D GDS TO-220F G S TO-263 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Av.