SLD2N60UZ Overview
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V
- Low gate charge ( typical 6.5nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- ESD Improved capability D D GS D-PAK GDS I-PAK G
