SLD4N60C - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLD4N60C
Manufacturer	Maple Semiconductor
File Size	321.23 KB
Description	N-Channel MOSFET
Datasheet	SLD4N60C Datasheet
Additional preview pages of the SLD4N60C datasheet.

SLD4N60C Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 4.5A, 600V, RDS(on) = 2.0Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N60C / SLU4N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1).

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Published: Apr 11, 2017 |