SLD4N70C - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLD4N70C
Manufacturer	Maple Semiconductor
File Size	883.33 KB
Description	N-Channel MOSFET
Datasheet	SLD4N70C Datasheet
Additional preview pages of the SLD4N70C datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 3A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N70C / SLU4N70C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.

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Published: Apr 11, 2017 |