SLD60R2K3SJ Datasheet | Maple Semiconductor

SLD60R2K3SJ / SLU60R2K3SJ SLD60R2K3SJ / SLU60R2K3SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D-PAK I-PAK...