SLD60R2K3SJ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLD60R2K3SJ
Manufacturer	Maple Semiconductor
File Size	627.86 KB
Description	N-Channel MOSFET
Datasheet	SLD60R2K3SJ Datasheet
Additional preview pages of the SLD60R2K3SJ datasheet.

SLD60R2K3SJ Product details

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD60R2K3SJ / SLU60R2K3SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Vol.

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Published: Apr 11, 2017 |