SLD65R2K6SJ Datasheet | Maple Semiconductor

SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D-PAK I-PAK...