SLD6N70U - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLD6N70U
Manufacturer	Maple Semiconductor
File Size	293.03 KB
Description	N-Channel MOSFET
Datasheet	SLD6N70U Datasheet
Additional preview pages of the SLD6N70U datasheet.

SLD6N70U Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 4.8A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Si.

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Published: Dec 27, 2018 |