SLD6N70U Datasheet | Maple Semiconductor

SLD6N70U / SLU6N70U SLD6N70U/SLU6N70U 700V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 4.8A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D-PAK I-PAK...